By Y. Shacham-Diamand (auth.), Yosi Shacham-Diamand, Tetsuya Osaka, Madhav Datta, Takayuki Ohba (eds.)
Advanced Nanoscale ULSI Interconnects: primary and Applications brings a entire description of copper dependent interconnect expertise for extremely huge Scale Integration (ULSI) expertise to built-in Circuit (ICs) software. This e-book studies the fundamental applied sciences used this day for the copper metallization of ULSI functions: deposition and planarization. It describes the fabrics used, their homes, and how they're all built-in, particularly in regard to the copper integration strategies and electrochemical strategies within the nanoscale regime. The booklet additionally offers quite a few novel nanoscale applied sciences that would hyperlink smooth nanoscale electronics to destiny nanoscale established platforms. This varied, multidisciplinary quantity will entice procedure engineers within the microelectronics undefined; universities with courses in ULSI layout, microelectronics, MEMS and nanoelectronics; and execs within the electrochemical operating with fabrics, plating and gear owners.
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Additional info for Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications
IP blocks are labeled by A, B, C,. . elements. Special switches are used to define the desired logic functions and to assign specific wires for connections among them. The number of nets and terminals at each level of the hierarchy depends on system architecture and design style. 1) where T is the number of terminals of a block containing N sub-blocks and k is the average number of terminals of the sub-blocks with r< 1 (Rent’s exponent). 75. Note that point-to-point connections among all N system elements could grow in proportion to N2 , so the low value of r is a result of using hierarchy and shared buses, as described above.
Decreasing the clock frequency and/or the drain bias is therefore an efficient (although not always desirable) way to lower the dynamic power consumption. The static power dissipation is taking place between switching events and is associated with source-to gate and source-to-drain leakage mechanisms. The source-togate leakage will be discussed in the next section. The source-to-drain leakage has two components: reverse-bias diode leakage on the transistor drains and subthreshold leakage through the channel when the transistor is turned off.
Res. & Dev. 46, 245 (2002) 6. Moore, G. : Cramming more components onto integrated circuits. Electronics 38(4) (1965) 7. : The life and death of Moore’s law, published on-line in First Monday, 7 (2002) 8. Dennard, R. ; Gaensslen, F. ; Yu, H. ; Rideout, V. ; and LeBlanc, A. : Design of ion-implanted MOSFETs with very small physical dimensions. IEEE J. Solid-State Circuits, SC-9, 256 (1974) 9. ; Dennard, R. ; and Shahidi, G. : CMOS scaling for high performance and low power-the next ten years. Proc.
Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by Y. Shacham-Diamand (auth.), Yosi Shacham-Diamand, Tetsuya Osaka, Madhav Datta, Takayuki Ohba (eds.)